Abstract
In this work, CuInSe 2 based flexible photovoltaic cells have been fabricated completely using non-vacuum low-cost techniques. Thin films were deposited on molybdenum thin foil substrates by electrodeposition using a buffered aqueous electrolyte with the deposition of subsequent layers performed by spray pyrolysis. In addition, the buffer layer CdS was replaced with a wider bandgap ZnS (3.7 eV) and analysis undertaken of the fabrication pathway, morphological and compositional changes resulting from the different precursor route. The deposited films were annealed in a Se atmosphere at 450 °C. The influence of annealing temperature and time on the properties of the films are briefly discussed. Characterisation of thin films was performed using aqueous electrolyte contacts. Capacitance measurements were made as a function of applied bias on thin films deposited on metal substrates with blocking electrolyte contacts where analysis of the impedance gave values of the space charge capacitance from which the doping density and flat band potential were derived. The structural characterisation was carried out using X-ray diffraction and Raman spectroscopy. The structure and device properties of Mo (SS)/CuInSe 2/ZnS/n +-ZnO/Ni were characterized using current-voltage technique and photocurrent spectroscopy. © 2011 Elsevier B.V.
