Autores UPV
Muñoz Muñoz Pascual,
García-Olcina Raimundo,
CHRISTIAN HABIB,
LAWRENCE R. CHEN,
XAVEER LEIJTENS,
Doménech Gómez José David,
Rius Mercado Manuel,
Capmany Francoy José,
T VRIES,
MARTIJN HECK,
LUC AUGUSTIN,
R. NOTZEL,
DAVID J. ROBBINS
Abstract
In this study, a multi-wavelength laser monolithically integrated on InP is presented. A linear laser cavity is built between two integrated Sagnac loop reflectors (SLRs), with an arrayed waveguide grating (AWG) as frequency-selective device, and semiconductor optical amplifiers as gain sections. The power is out coupled from the cavity using a side diffraction order of the AWG. Simultaneous laser operation is provided for four wavelengths/cavities in the device. The termination of the laser cavities with integrated SLRs avoids using high-reflection coating. Only anti-reflection coating is used in the output facet of the chip. © 2011 The Institution of Engineering and Technology.
