A CMOS Compatible Silicon-on-Insulator Polarization Rotator Based on Symmetry Breaking of the Waveguide Cross Section

Autores UPV
Año
Revista IEEE PHOTONICS TECHNOLOGY LETTERS

Abstract

A polarization rotator in silicon-on-insulator technology based on breaking the symmetry of the waveguide cross section is reported. The 25-¿m-long device is designed to be integrated with standard grating couplers without the need for extra fabrication steps. Hence, fabrication is carried out by a 2-etch-step complementary metal-oxide-semiconductor compatible process using 193-nm deep ultraviolet lithography. A polarization conversion efficiency of more than -0.85dB with insertion losses ranging from -1 to -2.5dB over a wavelength range of 30 nm is demonstrated. © 1989-2012 IEEE.