Autores UPV
Matres Abril Joaquín,
Ballesteros García Guillem,
Gautier Pauline,
J.M. FEDELI,
Martí Sendra Javier,
Oton Nieto Claudio José
Abstract
The nonlinear response of amorphous silicon waveguides is reported and compared to silicon-on-insulator (SOI) samples. The real part of the nonlinear coefficient gamma is measured by four-wave-mixing and the imaginary part of gamma is characterized by measuring the nonlinear loss at different peak powers. The combination of both results yields a two-photon-absorption figure of merit of 4.9, which is more than 7 times higher than for the SOI samples. Time-resolved measurements and simulations confirm the measured nonlinear coefficient $\gamma$ and show the absence of slow free-carrier effects versus ns free-carrier lifetimes in the SOI samples.
