Silicon CMOS compatible transition metal dioxide technology for boosting highly integrated photonic devices with disruptive performance

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Autores UPV

Sanchis Kilders Pablo, Sánchez Diana Luis David, Castera Molada Pau, Rosa Escutia Álvaro, Gutiérrez Campo Ana María, Brimont Antoine Christian Jacques, Saint Girons Guillaume, Orobtchouk Regis, Cueff Sebastian, Rojo-Romeo Pedro, Bachelet Roman, Regreny P., Vilquin B., Dubourdieu Catherine, Letartre X., Grenet G., Penuelas J., Hu X., Louahadj L., Locquet Jean-Pierre, LARS ZIMMERMANN, Marchiori Chiara, Abel Stefan, Fompeyrine Jean, ANDREAS HAKANSSON

Año

2014

CONGRESO

Silicon CMOS compatible transition metal dioxide technology for boosting highly integrated photonic devices with disruptive performance