Influence of BaTiO3 ferroelectric orientation for electro-optic modulation on silicon

Autores UPV
Revista Optics Express


The influence of BaTiO3 ferroelectric domain orientations for high efficiency electro-optic modulation has been thoroughly analyzed. The Mach-Zehnder modulator structure is based on a CMOS compatible silicon/BaTiO3/silicon slot waveguide that supports both TE and TM polarizations whereas the Pockels effect is exploited by the application of a horizontal electric field with lateral electrodes placed on top of the BaTiO3 layer. The influence of the waveguide parameters has been optimized for each configuration and the lowest Vπ voltage combined with low losses has been determined. A VπL as low as 0.27 V·cm has been obtained for a-axis oriented BaTiO3 and TE polarization by rotating the waveguide structure to an optimum angle.