Autores UPV
Castera Molada Pau,
Gutiérrez Campo Ana María,
Tulli Domenico,
Cueff Sébastien ,
Orobtchouk Regis ,
Rojo Romeo Pedro ,
Saint-Girons Guillaume ,
Sanchis Kilders Pablo
Abstract
The influence of an in-plane multi-domain structure in BaTiO3 films grown on SrTiO3/Si buffers for highly efficient electro-optic modulation has been analyzed. The modulation performance can be significantly enhanced by rotating a certain angle, the optical waveguide, with respect to the BaTiO3 crystallographic axes. A robust electro-optical performance against variations in the domain structure as well as the lowest V-pi voltage can be achieved by using the rotation angles between 35 degrees and 55 degrees. Our calculations show that Vp voltages below 1.7 V for a modulation length of 2 mm can be obtained by means of a CMOS compatible hybrid silicon/BaTiO3 waveguide structure.